Friday, September 23, 2022
10:20 – 11:10 a.m. (CST)
ETB 1020 – **In-person** (or Zoom for those receiving emails)
Dr. Biswajit Ray
Associate Professor, Dept. of ECE at The University of Alabama
Title: “Intelligent Data Storage Systems for Cyber-Security, Extreme-Reliability and Edge-Computing”
- Monolithic 3D NAND Flash technology is the industry’s workhorse for high density data storage
- Data security and user privacy are at stake in Flash storage
- Radiation environment makes Flash storage vulnerable
Even though solid-state storage technology has seen unprecedented growth in bit-density over the last few decades, emerging artificial intelligence and edge computing applications present new challenges related to security, resilience, and energy-efficiency. These challenges can only be addressed through innovative system design concepts that aptly utilize the physical properties of storage media. While the traditional storage system mainly relies on technology-agnostic algorithmic functions for the ease of portability, such design underutilizes the rich physical properties of the storage media. Thus, state-of-the art storage solutions are inadequate to ensure resilience, energy efficiency, system security and end-user privacy at the edge nodes and extreme environments.
In this talk, I will present a few innovative techniques that will bridge the gap between device and system design approaches to open-up new opportunities for enhancing resilience, security, and energy efficiency of future edge computing/storage applications. I will illustrate system-level techniques to define hardware security primitives using physical properties of commercial flash memory. I will share my experimental research findings on the radiation effects on the 3D NAND storage and system-level countermeasures. Finally, I will present a conceptual framework for energy-efficient computing and storage using flash memory for error-tolerant applications.
Dr. Biswajit Ray is an Associate Professor of Electrical and Computer Engineering with the University of Alabama in Huntsville (UAH), AL, USA, where he leads Hardware Security and Reliability Laboratory. Dr. Ray received Ph.D. from Purdue University, West Lafayette, IN and then he worked in SanDisk Corporation, Milpitas, California developing 3D NAND Flash memory technology. Dr. Ray holds 17 U.S. issued patents on non-volatile memory systems, published more than 50 research papers in international journals and conferences. Dr. Ray is a recipient of NSF CAREER Award (2022), NSF EPSCoR Research Fellow (2020) and Outstanding Faculty Award (2022) at UAH.
 S. Sakib, A. Milenkovic, and B. Ray, “Flash Watermark: An Anti-Counterfeiting Technique for NAND Flash Memories,” IEEE Transaction on Electron Devices, vol. 67, no. 10, pp. 4172–4177, 2020.
 P. Kumari, S. Huang, M. Wasiolek, K. Hattar, and B. Ray, “Layer Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation,” IEEE Transactions on Nuclear Science, vol. 67, no. 9, pp. 2021-2027, 2020.
 M. Hasan and B. Ray, “Data Recovery from “Scrubbed” NAND Flash Storage: Need for Analog Sanitization,” in Proc. of the 29th USENIX Security Symposium, Boston, MA, Aug. 2020.
Google Page: https://sites.google.com/a/uah.edu/ray_biswajit
Please join on Friday, 9/23/22 at 10:20 a.m. in ETB 1020.
Host: Dr. Sunil Khatri